(Hong Kong)
Product Summary
The K1023 is a N-channel silicon power MOS-FET.
Parametrics
Absolute maximum ratings: (1)drain-source voltage:800V; (2)continuous drain current:4A; (3)pulsed drain current:10A; (4)continuous reverse drain current:4A; (5)gate-sourece peak voltage:±30V; (6)max. power dissipation:60W; (7)operating temperature range:150℃; (8)storage temperature range:-55℃ to +150℃.
Features
Features: (1)high speed switching; (2)low on-resistance; (3)no secondary breakdown; (4)low driving power; (5)high voltage; (6)VGSS=±30V guarantee; (7)avalanche-proof.
Diagrams
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 K102 |
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Negotiable |
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K102K10X7RH5UH5 |
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CAP CER 1000PF 100V 10% RADIAL |
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K102K10X7RH5UL2 |
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CAP CER 1000PF 100V 10% RADIAL |
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K102K10X7RH5WH5 |
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CAP CER 1000PF 100V 10% RADIAL |
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K102K15C0GF53H5 |
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CAP CER 1000PF 50V 10% RADIAL |
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K102K15C0GF53L2 |
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CAP CER 1000PF 50V 10% RADIAL |
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